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TB6561FG
TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic
TB6561FG
Dual Full-Bridge Driver IC
TB6561FG
The TB6561FG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current control circuitry, the driver achieves high efficiency.
Features
* * * * * * * * * Power supply voltage: 40 V (max) Output current: 1.5 A (max) Low ON-resistance: 1.5 (upper and lower transistors/typ.) Direct PWM current control system Power-saving function Forward/reverse/short brake/stop modes Over-current protection: Ilim = 2.5A (typ.) Thermal shutdown Package: SSOP30-P-375-1.00 Weight SSOP30-P-375-1.00 0.63g typ.
The TB6561FG is a Pb-free product. The following conditions apply to solderability: *Solderability 1. Use of Sn-37Pb solder bath *solder bath temperature = 230C *dipping time = 5 seconds *number of times = once *use of R-type flux 2. Use of Sn-3.0Ag-0.5Cu solder bath *solder bath temperature = 245C *dipping time = 5 seconds *number of times = once *use of R-type flux
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TB6561FG
Block Diagram
S-GND 30 Vreg 2 SB 3 VCC 29 OUT2A 14 Vcc 10 OUT1A OUT2B 11 17 Vcc 21 OUT1B 20 S-GND 16,22,23,24
5V Over current detect circuit TSD
Control Circuit
1 S-GND
5
6
4
26
25
27
28
13
18 P-GNDB
7, 8,9,15 S-GND N.C.: 12pin, 19pin
IN1A IN2A PWMA
IN1B IN2B PWMB
CLD P-GNDA
Absolute Maximum Ratings (Ta = 25C)
Characteristics Power supply voltage Output voltage Output current Power dissipation Operating temperature Storage temperature Symbol VCC VO IO (Peak) PD Topr Tstg Rating 40 40 (Note 1) 1.5 2.5 (Note 2) -20 to 85 -55 to 150 Unit V V A W C C
Note 1: Please use output voltage within the above absolute maximum rating, 40 V, in which includes back-EMF voltage. Note 2: When mounted on a board (50 mm x 50 mm x 1.6 mm, Cu area: 50%)
Operating Range (Ta = 25C)
Characteristics Power supply voltage Symbol VCC, VM Rating 10 to 36 Unit V
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Pin Description
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Symbol S-GND Vreg SB PWM IN1A IN1 S-GND S-GND S-GND Vcc OUT1A N.C. P-GND OUT2 A S-GND S-GND OUT2B P-GND N.C. OUT1 Vcc S-GND S-GND S-GND IN2B IN1B PWM B CLD VCC S-GND Output pin 1 (chB) Power supply voltage input pin for motor drive (chB) Signal ground Signal ground Signal ground Input pin used to set output current level (chB) Input pin used to set output current level (chB) Rotation direction control pin (chB) Output signal pin of current limiter detection Power supply voltage input pin Signal ground VCC (opr) = 10 V to 36 V Signal ground 5-V output pin Standby pin Rotation direction control pin (chA) Input pin 1 (chA) Input pin 2 (chA) Signal ground Signal ground Signal ground Power supply voltage input pin for motor drive (chA) Output pin 1 (chA) Power ground for chA output Output pin 2 (chA) Signal ground Signal ground Output pin 2 (chB) Power ground Connect to a motor coil pin. VMB (opr) = 10 V to 36 V Input 0-V/5-V signal, Built in pull-down resistance(100k (typ.)). Input 0-V/5-V signal, Built in pull-down resistance(100k (typ.)). Input 0-V/5-V signal, Built in pull-down resistance(100k (typ.)). Connect to a motor coil pin. Connect to a motor coil pin. VMA (opr) = 10 V to 36 V Connect to a motor coil pin. Connect a capacitor (0.1 Function Description Remarks F) between this pin and S-GND pin.
High: Start, Low: Standby, Built in pull-down resistance(100k (typ.)). Apply a 0-V/5-V signal, Built in pull-down resistance(100k (typ.)). Apply a 0-V/5-V signal, Built in pull-down resistance(100k (typ.)). Apply a 0-V/5-V signal, Built in pull-down resistance(100k (typ.)).
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Electrical Characteristics (VCC = VMA = VMB = 24 V, Ta = 25C)
Characteristics Symbol ICC1 Supply current ICC2 ICC3 ICC4 Input voltage Control circuit Hysteresis voltage Input current VINH VINL VIN (HYS) IINH IINL Input voltage Hysteresis voltage PWM input circuit Input current PWM frequency Minimum clock pulse width Input voltage Standby circuit Hysteresis voltage Input current VPWMH VPWML VPWM (HYS) IPWMH IPWML fPWM tw(PWM) VINSH VINSL VIN (HYS) IINSH IINSL Output ON resistance Ron (U + L) IL (U) IL (L) VF (U) VF (L) Vreg VCLDH VCLDL ISD (OFF) TSD Test Circuit Test Condition Stop mode Forward/reverse mode Short break mode Standby mode (Design guarantee) VIN = 5 V VIN = 0 V (Design guarantee) VPWM = 5 V VPWM = 0 V Duty: 50 % (Design guarantee) VIN = 5 V VIN = 0 V Io = 0.2 A Io = 1.5 A VCC = 40 V VCC = 40 V Io = 1.5 A Io = 1.5 A Ireg = 1mA Io = 50 A 30 4.75 4.25 Min 2.3 -0.2 30 2.3 -0.2 30 2.0 2.3 -0.2 Typ. 5.5 5.0 5.5 1.5 0.4 50 0.4 50 0.4 50 1.5 1.5 1.3 1.3 5 50 160 Max 10 9 10 3 5.5 0.8 75 5 5.5 0.8 75 5 100 5.5 0.8 75 5 2.0 2.0 10 10 2.0 2.0 5.25 Vreg 0.5 A V kHz s A V A V mA Unit
Output leakage current
A
Diode forward voltage Internal reference voltage Output signal of current limiter detection Offset time for current limiter Thermal shutdown circuit operating temperature

V V V s C
(Design guarantee) (Design guarantee)
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Component Desctiption
1. Control Input/PWM Input Circuit
Vreg
IN, PWM 100 k
*
The input signals are shown below. Input at the CMOS and TTL levels can be provided. Note that the input signals have a hysteresis of 0.2 V (typ.). VINH/VPWMH: 2 to 5.5 V VINL/VPWML: GND to 0.8 V The PWM input frequency should be 100 kHz or less.
*
Input/Output Function
Input IN1 H IN2 H SB H PWM H L H L H L H L H L OUT1 L L L H L OUT2 L H L L L Output Mode Short brake CW/CCW Short brake CCW/CW Short brake Stop
L
H
H
H
L
H
L
L
H
OFF (high-impedance) OFF (high-impedance)
H/L
H/L
L
Standby
*
PWM control function The IC enters CW (CCW) mode and short brake mode alternately in PWM current control. To prevent shoot-through current caused by simultaneous conduction of upper and lower transistors in the output stage, a dead time is internally generated for 300 ns (target spec) when switching the upper and lower transistors. Therefore, synchronous rectification for high efficiency in PWM current control can be achieved without an off-time that is generated via an external input. Even when toggling between CW and CCW modes, and CW (CCW) and short brake modes, the off-time is not required due to the internally generated dead time.
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VM VM VM
OUT1
M
OUT1
M
OUT1
M
P-GND PWM ON t1 PWM ON OFF t2 = 500ns (typ.)
P-GND PWM OFF t3
P-GND
VM
VM
OUT1
M
OUT1
M
P-GND PWM OFF ON t4 = 500 ns (typ.) PWM ON t5
P-GND
VM t1 Output voltage waveform (OUT1) t2 t3 t5
P-GND t4
2. Thermal Shutdown Circuit (TSD)
The IC incorporates a thermal shutdown circuit. When the junction temperature (Tj) reaches 160C (typ.), the output transistors are turned off. After 50 s (typ.), the output transistors are turned on automatically. The IC has 20C of temperature hysteresis. TSD = 160C (target spec) TSD = 20C (target spec)
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3. Overcurrent Protection Circuit (ISD)
The IC incorporates an overcurrent protection circuit to detect voltage that flows through the output transistors. The overcurrent threshold is 2.5 A (typ.). Currents that flow through the output transistors are monitored individually. If overcurrent is detected in at least one of the transistors, all transistors are turned off. The IC incorporates a timer to count 50 s (typ.) for which the transistors are off. After 50 s, they are turned on automatically. If an overcurrent occurs again, the same operation is repeated. To prevent false detection due to glitch, the circuit turns off the transistors only when current that exceeds the overcurrent threshold flows for 10 s or longer.
ILIM Output current 0 50 s (typ.) 10 s (typ.) Not detected 10 s (typ.) 50 s (typ.)
The over-current threshold is a target spec. It varies in a range from approximately 1.5 A to 3.5 A.
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4. Current Limiter Detection Circuit (CLD)
Vreg
CLD
The CLD pin outputs the states of the current limiter and thermal shutdown circuits. If the current limiter for either channel A or B or the thermal shutdown circuit (shared for both channels) operates, the CLD pin state changes from low (normal state) to high. The CLD circuit supports automatic recovery; its output returns to low once the current decreases to a value below the limit or once the thermal shutdown state is released.
Mode Under TSD operation and current detection Normal CLD Output H L
When current limiter operated
ILIM Output current 0 10 s (typ.) Not detected
OFF time 50 s (typ.)
OFF time 50 s (typ.) 10 s (typ.)
CLD output
When TSD circuit operated
160 Chip temperature 120 (typ.) (typ.) TSD
CLD output
Current noise and other factors may cause false pulse output. To avoid this, Toshiba recommends a user to insert a filter or to carry out detection using a sampling monitor. When inserting a filter, please set the filter time-constant, considering the 50-s CLD output.
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OUTPUT UPPER SIDE Iout - VCE(sat) (V)
2.0
(V)
OUTPUT LOWER SIDE Iout - VCE(sat)
2.0

VCE(sat)
1.5
VCE(sat) SATURATION VOLTAGE
0 0.25 0.50 0.75 1.00 1.25 1.50
1.5
SATURATION VOLTAGE
1.0
1.0
0.5
0.5
0
0
0
0.25
0.50
0.75
1.00
1.25
1.50
OUTPUT CURRENT Iout
(A)
OUTPUT CURRENT Iout
(A)
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Application Circuit
(Note 2) C2 5V 0.1 F (Note 4) (Note 1) 24 V C1 29 VCC 10 Vcc 21 Vcc OUT1A 11 Motor OUT2A 14 P-GNDA 13 (Note 3) TB6561FG OUT1B 20 Motor OUT2BA 17 P-GNDB 18 GND CLD 28 Microcontroller S-GND 1, 7, 8, 9,15,16,22,23,24,30 (Note 3)
VDD PORT1 PORT2 PORT3 PORT4 PORT5 PORT6 PORT7 3 SB
2 Vreg
4 PWMA 5 IN1A 6 IN2A 27 PWMB 26 IN1B 25 IN2B
Note 1: A power supply capacitor should be connected between VCC and P-GND as close as possible to the IC. Note 2: C2 should be connected as close as possible to S-GND. Note 3: Avoid connecting the resistor to detect the motor current. If necessary, connect the resistor to VM line. Note 4: VCC (10 pin, 21 pin, 29 pin) should be shorted externally. Note 5: When the power is turned on, set SB for low (standby mode) or IN1 and IN2 for low (stop mode).
Caution for using
Utmost care is necessary in the design of the output, VCC, VM, and GND lines since the IC may be destroyed by short-circuiting between outputs, air contamination faults, or faults due to improper grounding, or by short-circuiting between contiguous pins.
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Package Dimensions
Weight: 0.63 g (typ.)
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Notes on Contents
1. Block Diagrams
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. Timing charts may be simplified for explanatory purposes. The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits. Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment.
2. Equivalent Circuits
3. Timing Charts
4. Application Circuits
5. Test Circuits
IC Usage Considerations
Notes on handling of ICs
[1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. [2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. [3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. [4] Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time.
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Points to remember on handling of ICs
(1) Over current Protection Circuit Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown. (2) Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation. (3) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (TJ) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (4) Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor's power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device's motor power supply and output pins might be exposed to conditions beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design.
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice. 021023_D
070122EBA_R6
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. 021023_A * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. 021023_B * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. 070122_C * Please use this product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 060819_AF * The products described in this document are subject to foreign exchange and foreign trade control laws. 060925_E
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